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175 C Operating Temperature
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Ο
Lower Leakage Current : 10 μ A (Max.) @ V DS = 100V
Lower R DS(ON) : 0.092 ? (Typ.)
IRF530A
BV DSS = 100 V
R DS(on) = 0.11 ?
I D = 14 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Continuous Drain Current (T C =25 C )
Continuous Drain Current (T C =100 C )
Symbol
V DSS
I D
Characteristic
Drain-to-Source Voltage
Ο
Ο
Value
100
14
9.9
Units
V
A
O
Total Power Dissipation (T C =25 C )
W/ C
I DM
V GS
E AS
I AR
E AR
dv/dt
P D
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Ο
Linear Derating Factor
O 1
2
O 1
O 1
O 3
56
+ _ 2 0
261
14
5.5
6.5
55
0.36
A
V
mJ
A
mJ
V/ns
W
Ο
T J , T STG
T L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
- 55 to +175
300
Ο
C
Thermal Resistance
Symbol
R θ JC
Characteristic
Junction-to-Case
Typ.
--
Max.
2.74
Units
R θ CS
R θ JA
Case-to-Sink
Junction-to-Ambient
0.5
--
--
62.5
Ο
C /W
Rev. B
?1999 Fairchild Semiconductor Corporation
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